{rfName}
Ph

Indexed in

License and use

Citations

67

Altmetrics

Grant support

This work was supported by the European Community's Seventh Framework Programme FP7/2007-2013 under Project MIDAS Grant Agreement 242334, and by the Spanish National Research and Development Program under Project TEC2011-28683-C02-01 and Project TeraSense (Consolider-Ingenio 2010, CSD2008-00068).

Analysis of institutional authors

Perez-Moreno, Carlos G.AuthorGrajal, JesusAuthor

Share

June 9, 2019
Publications
>
Article
No

Physical Electro-Thermal Model for the Design of Schottky Diode-Based Circuits

Publicated to:Ieee Transactions On Terahertz Science And Technology. 4 (5): 597-604 - 2014-09-01 4(5), DOI: 10.1109/TTHZ.2014.2337655

Authors: Pérez-Moreno, CG; Grajal, J

Affiliations

Tech Univ Madrid, Signal Syst & Radiocommun Dept, ETSI Telecomunicac, Madrid 28040, Spain - Author

Abstract

Thermal management has become an important issue in the design of Schottky diode-based circuits for high power applications. This work presents a physics-based numerical electro-thermal model for Schottky diodes capable of evaluating the thermal effects on the electrical performance of devices and circuits. The advantages of this model are the inclusion of temperature-dependent material parameters, the capability to calculate internal temperature distributions, and the identification of regions where heat is generated, providing useful information for device design and circuit reliability. The developed electro-thermal model is integrated into a circuit simulator in order to provide a tool which can be used to analyze, design and optimize Schottky diode-based circuits for high power operation. This tool has been validated with a 200 GHz doubler from the Jet Propulsion Laboratory (JPL-NASA). A better agreement with measurement results at high input powers is obtained with our model compared with other previous models reported in the literature due to the self-consistent implementation of the temperature-dependency of physical parameters like electron mobility and saturation velocity.

Keywords

BandDevicesFrequency-multipliersGhzHeat-generationPhysical electro-thermal modelPowerSchottky diodeSelf-heatingThermal managementThermal resistanceWave

Quality index

Bibliometric impact. Analysis of the contribution and dissemination channel

The work has been published in the journal Ieee Transactions On Terahertz Science And Technology due to its progression and the good impact it has achieved in recent years, according to the agency WoS (JCR), it has become a reference in its field. In the year of publication of the work, 2014, it was in position 54/248, thus managing to position itself as a Q1 (Primer Cuartil), in the category Engineering, Electrical & Electronic.

From a relative perspective, and based on the normalized impact indicator calculated from the Field Citation Ratio (FCR) of the Dimensions source, it yields a value of: 5.65, which indicates that, compared to works in the same discipline and in the same year of publication, it ranks as a work cited above average. (source consulted: Dimensions Sep 2025)

Specifically, and according to different indexing agencies, this work has accumulated citations as of 2025-09-25, the following number of citations:

  • WoS: 19
  • Scopus: 24
  • Google Scholar: 24

Impact and social visibility

From the perspective of influence or social adoption, and based on metrics associated with mentions and interactions provided by agencies specializing in calculating the so-called "Alternative or Social Metrics," we can highlight as of 2025-09-25:

  • The use of this contribution in bookmarks, code forks, additions to favorite lists for recurrent reading, as well as general views, indicates that someone is using the publication as a basis for their current work. This may be a notable indicator of future more formal and academic citations. This claim is supported by the result of the "Capture" indicator, which yields a total of: 35 (PlumX).

Leadership analysis of institutional authors

There is a significant leadership presence as some of the institution’s authors appear as the first or last signer, detailed as follows: First Author (PEREZ MORENO, CARLOS GUSTAVO) and Last Author (GRAJAL DE LA FUENTE, JESUS).